| abstract |
(57) [Problem] To provide a wiring forming method by a dual damascene method in which a lateral dimension of a via hole can be easily controlled and a crown due to undissolved resist can be prevented. SOLUTION: An etching stopper film 7, an interlayer insulating film 6, an etching stopper film 5, an interlayer insulating film 4, and a cap film 3 are formed in this order on a lower wiring layer 8, and a via hole 9 is formed. To form Next, the lower antireflection film 2 is applied on a part of the via hole 9 and on the cap film 3. Next, a positive resist 1 is applied so as to fill the space on the lower antireflection film 2 and in the via hole 9 on the lower antireflection film 2. The resist 1 has a dissolution rate of 250 to 7 at the exposed portion. One having a dissolution rate of 0.05 to 0.4 nm / sec is used. This resist 1 Is developed and exposed to form a wiring trench 10. next, A conductive material 12 is buried in the via hole 9 and the wiring trench 10. |