| abstract |
(57) [PROBLEMS] To provide a method for growing a gallium nitride single crystal capable of incorporating oxygen as an n-type dopant. SOLUTION: A gallium nitride while maintaining a surface other than the C-plane while supplying a source gas containing a gallium raw material, a nitrogen raw material, and oxygen to be doped using a seed crystal having a surface other than the C-plane as a surface (upper surface). The gallium nitride crystal is doped with oxygen through the surface by vapor-growing the crystal. Alternatively, a gallium nitride crystal is formed while generating a facet plane other than the C plane while supplying a source gas containing a gallium raw material, a nitrogen raw material, and oxygen to be doped using a seed crystal having a C plane on the surface, and maintaining the facet plane. Is vapor-phase grown in the c-axis direction to dope oxygen into the gallium nitride crystal through the facet plane. |