http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002367381-A

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filingDate 2001-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fac171fc48c782d53657df0201f129d6
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publicationDate 2002-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002367381-A
titleOfInvention Nonvolatile semiconductor memory device and writing method thereof
abstract (57) [Summary] [PROBLEMS] In multi-level writing, the number of times of verification is large and the write cycle time including verification is long. Also, power consumption is large. A step of injecting electric charge into a dielectric film laminated between a semiconductor in which a channel is formed and a control electrode and writing data of three or more values into a memory cell is performed by setting a reference threshold level. A setting step (not shown), a program step (ST1 to ST3) for setting N (natural numbers equal to or more than 2) threshold levels by injecting charges, and M (natural number smaller than N) among the set threshold levels Verifying each threshold level (ST4). If additional programs are required as a result of verification, For each of the N threshold levels, an additional program (ST1 to ST3) is performed using a predetermined condition according to the result of the verification.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011524599-A
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Total number of triples: 23.