| abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device in which a PMOS is used relatively more frequently than an NMOS and a PMOS is used for an output driver, and which is excellent in stability, reliability, performance and low cost. An integrated circuit device and a method for manufacturing the same are provided. SOLUTION: Complementary M in a semiconductor integrated circuit device is provided. OS is set to horizontal P-type MOSFET 36 and N-type MOSFET 3 7, and the output driver is constituted by a P-type vertical MOSFET 38 having a trench structure. The conductivity type of the gate electrode was P-type. |