Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d0f52bb4069f8a19d70dcfb697c67a |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-108 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
filingDate |
2001-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_011a1a34e0710f341a81c9dd1d273ea7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_201abdae12f920f7b848ecd29a09137f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_464180103f87187b3aab20511a8537b7 |
publicationDate |
2002-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2002357902-A |
titleOfInvention |
Positive resist composition |
abstract |
PROBLEM TO BE SOLVED: To provide a positive resist composition suitable for use as an exposure light source of 160 nm or less, particularly F 2 excimer laser light (157 nm), specifically 157 n To provide a positive resist composition exhibiting sufficient transmittance when a light source of m is used, and satisfying coating properties and development defects. SOLUTION: (A) a resin having at least one of two kinds of repeating units each having a specific structure and decomposing by the action of an acid to increase solubility in an alkali developing solution; and (B) irradiation with actinic rays or radiation. A positive resist composition containing a compound that generates an acid. |
priorityDate |
2001-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |