Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01015 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13055 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2002-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_285d9c6677775aa19de5e86c1287590e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2df82ceee6341e932e414a38a4d85f33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_427a9686f36cb46d2a6aac68a04f6610 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0962bed32a9ede92f9ce8823b505b841 |
publicationDate |
2002-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2002353453-A |
titleOfInvention |
Insulated gate semiconductor device |
abstract |
(57) [Summary]n[Purpose] To reduce on-voltage.nA gate electrode is provided on an upper main surface of a semiconductor substrate. A stripe-shaped groove 207 embedded with 210 is formed. Semiconductor substrate 200 sandwiched between adjacent grooves 207 The upper main surface has N + Emitter layer 206 is exposed like a ladder are doing. Therefore, at the contact surface with the emitter electrode 212, Even if the position of a certain band-shaped region Ra is shifted, the emitter electrode 21 2 is N + It makes reliable contact with the emitter layer 206. Also, Ladder-shaped N + The emitter layer 206 is adjacent to the groove 207. The channel region 208 is formed Is formed along the line.n[Effect] It is easy to miniaturize the element. In addition, miniaturization effectively contributes to a reduction in on-voltage. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114551589-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2845882-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014129575-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011118581-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2306479-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2302650-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012132855-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010050575-A1 |
priorityDate |
2002-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |