| abstract |
(57) Abstract: To provide a ferroelectric transistor structure for improving the reliability of a memory transistor and a method for manufacturing the same. SOLUTION: The ferroelectric transistor structure of the present invention comprises: a) a ferroelectric gate having a lower portion, a side surface, and an upper portion on a semiconductor substrate; b) a gate insulator inserted between the ferroelectric gate and the semiconductor substrate; c) passivation adjacent to the side surface. And sidewalls. The semiconductor substrate is silicon or SOI, and the ferroelectric gate is PG O, PZT, SBT, SBO, SBTO, SBTN, S TO, BTO, BLT, LNO or YMnO 3 . |