http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002334926-A

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filingDate 2002-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09cb229f8e14e1351852b77533b2b079
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publicationDate 2002-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002334926-A
titleOfInvention Use of a sacrificial layer to facilitate metallization for microstructures
abstract (57) [Problem] To provide a method of manufacturing a copper wiring using a sacrificial layer. SOLUTION: An SiC layer (106) is formed on a dielectric layer (102). A sacrificial layer (108) is formed on the SiC layer (106). Sacrificial layer (108), SiC Grooves (112) are formed in layer (106) and dielectric layer (102) by etching. Sacrificial layer (108) Is sputter-etched to form a dielectric layer (10 An opening wider than the upper part of 2) is formed on the sacrificial layer (108). A barrier layer (114) and a copper seed layer (116) are formed. The trench (112) is filled with copper (124). C Using MP, extra copper (124) and barrier layer (114) Is removed and fixed on SiC (106).
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007043100-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012064713-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2007043100-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005538544-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006351899-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4549937-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101336962-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013258408-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012510164-A
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