http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002329908-A

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filingDate 2001-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2002-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002329908-A
titleOfInvention Laser amplifier
abstract (57) [Summary] (Modified) [PROBLEMS] To provide a 1.65 μm band amplifier pumped by a semiconductor laser. A first to generate a laser 4 of the corresponding wavelength between level 4 S 3/2 and the lower level for the formation of self-termination system An excitation light source 3, from the upper level 4 S 3/2 on that is higher than the level 2 H 11/2, second excitation light source 1 Metropolitan for generating a laser 2 for supplying energy to the 4 F 7/2 It is configured. The laser 4 and the laser 2 generate the signal light 8 to be amplified. Is introduced into the amplification medium main line 10 through which is passed. The lifetime of the lower-level ion is shorter than the lifetime of the upper-level, and the transition from the lower-level to the upper-level forces such a self-terminated system in which the transition from the upper-level to the lower-level is delayed from the external system. The laser 4 is introduced to forcibly transition ions staying at the lower level to the upper level. Forced Such upward transition, caused huge number of free to lower level, the upper level than the upper level near 2 H for energy supply in the slightly upper 11/2, 4 F 7/2 The stimulated emission transitioning from to the lower level is forcibly induced.
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