| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1010e3862914acdd087e73d76911ec6d |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-28 |
| filingDate |
2001-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_594e7bcc0f3959c731470541d0be48af |
| publicationDate |
2002-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002329669-A |
| titleOfInvention |
Film forming method, film forming apparatus, and semiconductor light emitting device |
| abstract |
(57) [Problem] To provide a new film forming method and a film forming apparatus capable of easily forming a damage-free high-functional epitaxial film. SOLUTION: A target is sputtered by helicon wave excited plasma, and epitaxial growth is performed on a substrate that does not reach the plasma. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012025996-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011108552-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014241417-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9045821-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10854448-B2 |
| priorityDate |
2001-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |