http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002328115-A

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filingDate 2001-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8a87f8fac218c0037114f9b77413ec4
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publicationDate 2002-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002328115-A
titleOfInvention Method of manufacturing gas diffusion filter for photoacoustic gas sensor
abstract PROBLEM TO BE SOLVED: To provide a method for manufacturing a gas diffusion filter for a photoacoustic gas sensor having stable characteristics, which is suitable for being integrated into a small-sized photoacoustic gas sensor. SOLUTION: An Si substrate 11 is etched substantially perpendicularly from one surface to form a concave portion 12 which forms a cavity of a photoacoustic gas sensor, and a portion located outside the concave portion is substantially separated from the other surface by the Si substrate. A partition 18 having a predetermined thickness is formed on the Si substrate by vertical etching [first step], and then a predetermined region excluding the partition is masked to anodize the partition to form a porous silicon forming a gas diffusion filter. The layer 19 is formed [second step].
priorityDate 2001-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 20.