| abstract |
(57) [Summary] [PROBLEMS] To manufacture a device such as a high-performance light-emitting diode or LD at a practical size and at low cost. III capable of growing high-quality group III nitride crystals A group nitride crystal growth method and a group III nitride crystal growth apparatus are provided. SOLUTION: A mixed melt holding container 102 contains a mixed melt 103 composed of Ga as a group III metal and Na as an alkali metal. Where Na Is 99%, the purity of Ga is 99.99999%, the purity of nitrogen gas is 99.999%, and the mixed melt holding vessel 102 When the material is a sintered body of BN, the solid object 110 has a shape in which a hole 111 is partially formed. Nitrogen dissolves into the mixed melt 103 through the hole 111, In the mixed melt 103, a single crystal 109 of GaN as a group III nitride can be grown. |