http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002324793-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2001-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d916a61238d443b3fb4caa2fa1af5e69 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d6ad465bea39cac6a2810ea2a5d075a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d741173cbd530d223b6db3820039501 |
| publicationDate | 2002-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002324793-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | An object of the present invention is to provide a method of manufacturing a semiconductor device including a step of forming a dielectric thin film which can be deposited at a practical speed and has a small surface roughness. When forming a dielectric thin film on a substrate by a chemical vapor deposition method, a step of depositing a part of the dielectric thin film on the substrate, a step of heat-treating the dielectric thin film, A method for manufacturing a semiconductor device, comprising the step of depositing a dielectric thin film at a deposition rate higher than the deposition rate of a dielectric thin film. |
| priorityDate | 2001-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.