http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002319548-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26 |
| filingDate | 2002-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b6ea165df41030d7f148c5683616f75 |
| publicationDate | 2002-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002319548-A |
| titleOfInvention | Crystal heat treatment method and semiconductor device |
| abstract | (57) [Summary] [Problem] To mix several percent of nitrogen in a crystal like a III-V compound mixed crystal semiconductor material in which nitrogen such as GaInNAs is mixed with a group V element other than nitrogen. An object of the present invention is to provide a heat treatment method for obtaining a crystal having excellent emission characteristics in crystal growth of a material to be crystallized. SOLUTION: When heat-treating a group III-V compound semiconductor containing both nitrogen and at least one kind of group V element other than nitrogen as a group V composition, the heat treatment is performed at 50 ° C / sec or more and 500 ° C or more. A first step of raising the temperature at a rate of 550 ° C./sec or less And a second step of holding at a holding temperature of 900 ° C. or lower. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7691655-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009059843-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7238050-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007141983-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004319666-A |
| priorityDate | 2001-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.