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filingDate 2001-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bfe319e4870e9b7e481ca34015aef02
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publicationDate 2002-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002314131-A
titleOfInvention Translucent electrode, method of manufacturing the same, and group III nitride semiconductor light emitting device using the same
abstract (57) [Problem] To provide a p-type electrode for a group III nitride semiconductor light emitting device excellent in light transmittance and a group III nitride semiconductor light emitting device using the same. SOLUTION: A thin film made of simple gold is formed on the surface of a p-type group III nitride semiconductor, and a light-transmitting p-type electrode having a structure in which the surface of the gold thin film is protected by a silicon dioxide thin film. Since the gold thin film is covered with the protective film of silicon dioxide, gold ball-up does not occur even in the annealing step for obtaining an ohmic junction, and a high light transmittance can be obtained.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007258376-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100703091-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006100475-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005011857-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007180326-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7276706-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009117604-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008205468-A
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