http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002313939-A

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filingDate 2002-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2002-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002313939-A
titleOfInvention Capacitor device and method of forming capacitor
abstract (57) Abstract: To provide a more reliable damascene capacitor structure that prevents leakage and destructive insulation between capacitor plates. A trench having sidewalls formed in a layer of an interlevel dielectric insulator, a first thin lower conductor plate formed at a bottom of the trench, and coplanar with a surface of the interlevel dielectric insulator. The second upper conductor plate 44 And a dielectric layer 42 formed between the first conductor plate and the second conductor plate, wherein the dielectric layer prevents one of the conductor plates from extending to a sidewall of the trench, At least one upper corner of one of the conductor plates does not extend towards the upper part of the trench.
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