| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G10K2210-3026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G10K2210-1082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R2410-01 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R5-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G10K11-178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R1-326 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 |
| filingDate |
2001-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_951f1812bd7e12c407e84063938b4776 |
| publicationDate |
2002-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002313718-A |
| titleOfInvention |
Method for manufacturing thin film transistor |
| abstract |
(57) Abstract: A method for manufacturing a thin film transistor formed of an amorphous silicon film on a resin substrate without performing a heat treatment at a temperature equal to or higher than a heat resistance temperature of the resin substrate. The method comprises the steps of forming a hydrogen-containing amorphous silicon film on a resin substrate and applying a laser beam at an intensity equal to or lower than a threshold intensity at which the amorphous silicon film is crystallized. Irradiating the amorphous silicon film 5. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010067483-A1 |
| priorityDate |
2001-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |