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filingDate 2001-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2002-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002305208-A
titleOfInvention Method for manufacturing semiconductor device
abstract [PROBLEMS] To irradiate a laser to a top gate type TFT in a process of adding and activating a dopant to a semiconductor film formed on a glass substrate, a source region and a drain region are provided. Provided is a laser annealing method in which sufficient laser energy is applied and at the same time, unnecessary energy is not applied to a channel region or a low-dose region provided in a Gold TFT. When a glass substrate is irradiated from the back side of a glass substrate on which a semiconductor film is not formed by using a second harmonic of a transparent YAG laser or the like, the laser is also irradiated near a channel formation region. However, if sufficient energy is applied to the source region and the drain region 1031, unnecessary energy is added to the channel region 1032 and the performance of the TFT is reduced. By irradiating again from the surface side of the glass substrate, strong energy is given only to the source region and the drain region.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006013461-A
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