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filingDate 2001-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2002-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002299769-A
titleOfInvention Semiconductor laser device and method of manufacturing the same
abstract [PROBLEMS] To provide a GaN-based semiconductor laser device having high reliability even at the time of high-temperature high-power operation and a method of manufacturing the same. SOLUTION: The back surface of a substrate made of a nitride semiconductor is anisotropically etched to form an uneven surface, and the surface area is increased about three times or more.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006315949-A
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