| abstract |
(57) Abstract: A current-perpendicular-to-type magnetoresistive element, a magnetic head, which can obtain a high MR change rate and an MR change amount without violating a scaling law even in a submicron-sized CPP-SV element. It is an object of the present invention to provide a magnetic reproducing device and a magnetic storage device having the same. SOLUTION: A high-resistance oxide, nitride, fluoride, boride, sulfide or carbide having a mirror reflection effect on conduction electrons on at least side surfaces of a magnetization fixed layer and a non-magnetic intermediate layer in a magnetoresistive film. By providing the side wall layer made of, it is possible to prevent inelastic scattering of electrons and loss of spin information on the side surface of the magnetoresistive film. Further, shunting of the sense current can be prevented. |