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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-84
filingDate 2001-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a89361a546e92023cc66291f3eecf7c6
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publicationDate 2002-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002299639-A
titleOfInvention Method for manufacturing semiconductor device having membrane structure
abstract (57) [Summary] [PROBLEMS] When forming an electrode pad together with a floating membrane structure on a substrate, it is possible to increase the degree of freedom of the membrane structure of the membrane structure and prevent buckling thereof. To do. SOLUTION: On an aluminum pad 7 and a protection film 8 made of silicon nitride, an etching protection film 11 made of a polyimide resin which is a material having an etching selectivity different from those of the aluminum pad 7 and the protection film 8 is deposited. In this state, the silicon substrate 1 is anisotropically etched to form the cavities 2, thereby forming a membrane structure including the insulating film 3 made of silicon oxide, the interlayer insulating film 5, and the protective film 8 made of silicon nitride. 9 to form the prototype. From this state, the entire etching protection film 11 is dry-etched. At this time, the etching is stopped when the thickness of the etching protection film 11 becomes a predetermined value or less (a very thin state).
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