http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002299639-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7af673589ca45d2fd8b9ea902cdbd1dc |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-84 |
filingDate | 2001-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a89361a546e92023cc66291f3eecf7c6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c86cc63d9abf2b05a94f6b781a83ebe4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2bf009bef6817815bab1df7836e49c0 |
publicationDate | 2002-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2002299639-A |
titleOfInvention | Method for manufacturing semiconductor device having membrane structure |
abstract | (57) [Summary] [PROBLEMS] When forming an electrode pad together with a floating membrane structure on a substrate, it is possible to increase the degree of freedom of the membrane structure of the membrane structure and prevent buckling thereof. To do. SOLUTION: On an aluminum pad 7 and a protection film 8 made of silicon nitride, an etching protection film 11 made of a polyimide resin which is a material having an etching selectivity different from those of the aluminum pad 7 and the protection film 8 is deposited. In this state, the silicon substrate 1 is anisotropically etched to form the cavities 2, thereby forming a membrane structure including the insulating film 3 made of silicon oxide, the interlayer insulating film 5, and the protective film 8 made of silicon nitride. 9 to form the prototype. From this state, the entire etching protection film 11 is dry-etched. At this time, the etching is stopped when the thickness of the etching protection film 11 becomes a predetermined value or less (a very thin state). |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105571749-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105571749-B |
priorityDate | 2001-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.