http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002299577-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73ebc284a55d5daf0e209d6186c9e65c |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 |
| filingDate | 2001-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f60109b0f4dac94e4009805bd3878d9a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb0de79e456d77c2e47e1ca8d99edde5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60471c939226b27e7f3ca619bd69fc58 |
| publicationDate | 2002-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002299577-A |
| titleOfInvention | Method of manufacturing ferroelectric thin film element and ferroelectric thin film element |
| abstract | (57) [Problem] To form a thin film exhibiting a barrier property against hydrogen on the upper electrode of a ferroelectric thin film capacitor, since a crystallinity cannot be controlled, and a sufficient barrier effect cannot be obtained. Was an issue. SOLUTION: As an upper electrode of a ferroelectric thin film capacitor, A metal thin film formed in advance on another single crystal substrate while controlling the crystallinity is transferred and formed, and a desired hydrogen barrier film is formed thereon. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7518173-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100461421-C |
| priorityDate | 2001-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.