http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002290013-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d3d2d7e98394b74ff1a43c04aab64dd0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9638563b6cf2829449ccaebe6e48d219 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L79-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K3-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-07 |
| filingDate | 2001-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb4922c39c7b169ac9497aeb09725065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b88d711a74cf18bbf47d3dea2d2b5fda http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de86340bd55f712bb94fc17e5e0cd6ee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_511e24fdb0f0310e1baa1ef57a372433 |
| publicationDate | 2002-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002290013-A |
| titleOfInvention | Metal circuit pattern forming method |
| abstract | PROBLEM TO BE SOLVED: To provide a metal circuit pattern forming method which has high adhesion strength between a polyimide base material and a metal circuit portion and high insulation resistance between lines of a metal circuit. SOLUTION: A polyimide resin precursor layer 2 is formed on a polyimide substrate 1, a photosensitive resin 3 is applied on the polyimide resin precursor layer 2, and the photosensitive resin 3 is exposed and developed to form a non-metal circuit. Forming the resin pattern mask 4 exposing the polyimide resin precursor layer 2 of the portion 6 and forming the non-metal circuit forming portion 6 The polyimide resin precursor layer 2 is removed, the resin pattern mask 4 is peeled off, and then ultraviolet rays 8 are irradiated in the presence of a hydrogen donor 7 to form a plating base nucleus. Forming a base metal layer for forming the layer 9, and forming a metal circuit portion 5 on the plating base metal layer 9. And a metal circuit forming step consisting of an imidization treatment in which the polyimide resin precursor layer 2 is heated and imidized to form a polyimide resin layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4579048-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022024820-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006316296-A |
| priorityDate | 2001-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.