| abstract |
An object of the present invention is to efficiently activate an impurity ion-implanted layer into a wide gap semiconductor such as SiC, diamond, and GaN, and to apply the method to an actual device process. It is to provide. SOLUTION: The activation method of an impurity ion implantation layer according to the present invention is characterized in that a semiconductor material doped with a predetermined impurity element by ion implantation has an energy equal to or higher than the band gap of the semiconductor material. Is irradiated while the semiconductor material is heated. Further, the irradiation is performed while changing the power density of the laser light to be applied stepwise, thereby preventing evaporation of the surface constituent elements of the semiconductor material and electrically activating the impurities implanted at a deeper position. . |