http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002280548-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2001-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3322c7e63ae7bcf8ce21e9d57ac8f60 |
| publicationDate | 2002-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002280548-A |
| titleOfInvention | Method for manufacturing field effect semiconductor device |
| abstract | (57) Abstract: A method of manufacturing a field-effect semiconductor device, which employs simple means so that a source region or a drain region can be subjected to impurity activation heat treatment by applying an absorber film process. Impurity activation at the channel-side tip of the region or the drain region is sufficiently performed to reduce the parasitic resistance. SOLUTION: Ion implantation for forming a source extension region 15 and a drain extension region 16 is performed on a surface of a silicon semiconductor substrate 11 on a surface of a silicon semiconductor substrate 11 with a gate electrode 13 having a side wall 14 formed as a mask, being separated from both sides in a channel direction of the gate electrode. After removing the side walls, an absorber film made of an insulating film 17 and a metal film 18 covering the whole including the gate electrode 13 is formed, and the absorber film is irradiated with a laser beam to form the source extension region 15 and the drain. Laser annealing the extension region 16; |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10176955-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100426464-C http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9548205-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004109783-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7932185-B2 |
| priorityDate | 2001-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.