http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002269998-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06F12-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-28
filingDate 2001-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f135323dd276e89e7b702b110ee2dde1
publicationDate 2002-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002269998-A
titleOfInvention Test circuit and semiconductor memory device
abstract (57) [PROBLEMS] To provide a test apparatus capable of specifying a memory cell in which reading and writing have not been properly performed when a memory cell of a DRAM is tested. To A the test, a write-side selection circuit 4 n for selecting a memory cell of a single writing the test data, A memory cell selected by the write-side selection circuit 4 n is selected as a memory cell from which test data is read, and test data to be written to the selected memory cell and the test data are obtained by reading the test data from the selected memory cell. A read-side selection circuit 6 n for comparing the test data with the test data and outputting the result of the comparison.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014165837-A
priorityDate 2001-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID44152182
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426271163

Total number of triples: 17.