http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002269998-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06F12-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-28 |
filingDate | 2001-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f135323dd276e89e7b702b110ee2dde1 |
publicationDate | 2002-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2002269998-A |
titleOfInvention | Test circuit and semiconductor memory device |
abstract | (57) [PROBLEMS] To provide a test apparatus capable of specifying a memory cell in which reading and writing have not been properly performed when a memory cell of a DRAM is tested. To A the test, a write-side selection circuit 4 n for selecting a memory cell of a single writing the test data, A memory cell selected by the write-side selection circuit 4 n is selected as a memory cell from which test data is read, and test data to be written to the selected memory cell and the test data are obtained by reading the test data from the selected memory cell. A read-side selection circuit 6 n for comparing the test data with the test data and outputting the result of the comparison. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014165837-A |
priorityDate | 2001-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID44152182 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426271163 |
Total number of triples: 17.