| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2216-18 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C5-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-12 |
| filingDate |
2001-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c9ab5c92905c41fac29670f4692b39b |
| publicationDate |
2002-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002261239-A |
| titleOfInvention |
Boost circuit of nonvolatile semiconductor memory device |
| abstract |
(57) [Problem] To prevent an intermediate node of a two-stage capacitor from being charged up. SOLUTION: A p-MOS transistor 38 is connected to an intermediate node 5. The level shifter 39 supplies an output signal hresetb based on the input signal Reset to the gate of the p-MOS transistor 38. In the initial state before the pump operation starts, the signal Reset is set to “H” and the p-MOS The transistor 38 is turned on. Thus, the intermediate node 5 By discharging the positive charge through the p-MOS transistor 38 and the negative charge through the N-well of the p-MOS transistor 38, the potential of the intermediate node 5 is set to about 0.7V. Therefore, even if the p-MOS transistor 38 is turned off after the pump operation starts, the maximum voltage applied to each of the capacitors C4a and C4b is 4 V, and it is possible to prevent the breakdown voltage of the capacitor insulating film from being exceeded. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7224943-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004247689-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017131068-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017131067-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017131069-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8670280-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007188567-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020124078-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012023177-A |
| priorityDate |
2001-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |