| abstract |
(57) Abstract: A silicon-containing polymer compound comprising a repeating unit represented by the general formula (1) or (2). Embedded image (In the formula, R 1 is an alkylene group, R 2 represents a hydrogen atom, or an alkyl group, R 3, R 4, R 5 is an alkyl group, a haloalkyl group, an aryl group, or a silicon-containing group, R 3, At least one of R 4 and R 5 is a silicon-containing group. R 6 Is an oxygen atom, an alkylene group, or an arylene group. R 7 to R 9 are an alkyl group, a fluorinated alkyl group, Or an aryl group. n is an integer of 2 to 10. [Effect] The resist material of the present invention is sensitive to high energy rays, and has sensitivity, resolution at wavelengths of 300 nm or less, Excellent oxygen plasma etching resistance. Therefore, the polymer compound and the resist material of the present invention can be used as a material for a two-layer resist particularly excellent in these properties, and can easily form a fine and perpendicular pattern to the substrate. It is suitable as a fine pattern forming material for VLSI manufacturing. |