http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002252218-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| filingDate | 2001-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98a655836ce60fa5d6d583f80a15619d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c104e37a23970f07cbc95dba9cfb9a00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6817dc1ebd3306a6f613193bbfd9b5a0 |
| publicationDate | 2002-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002252218-A |
| titleOfInvention | Etching solution for compound semiconductor film, etching method using the same, and method for recovering iodine from waste etching solution |
| abstract | An object of the present invention is to provide an etchant for a compound semiconductor film having excellent selectivity, an etching method using the same, and a method for recovering iodine from the etching waste liquid. An etchant for selectively etching an Al x Ga 1-x As (0.4 ≦ x ≦ 1) layer, wherein the etchant is an aqueous hydrochloric acid solution containing an anion containing an iodine atom. It is used as a film etching solution. |
| priorityDate | 2001-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.