| abstract |
(57) Abstract: An object of the present invention is to provide a wavelength conversion type semiconductor element that increases the reflectance of an electrode functioning as a reflection surface and reduces contact resistance. SOLUTION: A lower p-type layer 13 and an upper n-type layer 12 constituting a pn junction, a wavelength conversion material 17 disposed above these, and a p-type layer provided on the lower surface of the p-type layer A first electrode 14 that does not allow the excitation light from the pn junction electrically in contact with the outside to transmit to the outside, and a second electrode 14 that surrounds the end faces of the p-type layer and the n-type layer and is in electrical contact with only the n-type layer. Electrode 16 Wherein the second electrode is made of a material having high reflectivity in the vicinity of the wavelength of the excitation light from the pn junction and having a thickness of 10 nm or more and a high reflectivity metal layer 16a. And the conductive transparent oxide layer 16b to constitute the wavelength conversion type semiconductor element 10. |