| abstract |
[PROBLEMS] To enable efficient annealing in a short time in a required area by using an excimer laser capable of annealing in a shallow region of a substrate due to a short wavelength and a large light absorption coefficient. Provided is a method for forming an ultra-shallow junction. Impurity ions are implanted into an impurity implanted region (4, 5) on a semiconductor substrate (1) to a depth of 40 nm or less by ion implantation, and impurities are not diffused through the semiconductor substrate (1). Temperature to a low temperature of Using an excimer laser having a wavelength of 0 nm or less, an impurity-implanted region (4, 5) to recrystallize the implanted regions (4, 5) and electrically activate impurities. |