| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-542 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M14-00 |
| filingDate |
2001-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_142d21ea716930bd196a5dae9af5e924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fead25c6864cdf6f34ee91ea2dfc8a13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_132c7437d95dff8d8924038cd977de76 |
| publicationDate |
2002-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002246076-A |
| titleOfInvention |
Method for producing dye-sensitized wet solar cell |
| abstract |
PROBLEM TO BE SOLVED: To provide a method for producing a dye-sensitized wet solar cell having high photoelectric conversion efficiency by increasing the adsorption amount of a sensitizing dye on the surface of an oxide semiconductor electrode. When a dye is adsorbed on the surface of an oxide semiconductor electrode, the oxide semiconductor electrode formed on a transparent substrate and a transparent conductive film is placed in a container and placed in a vacuum chamber. . When the dye solution 15 is poured into the container 7 after evacuating the vacuum chamber 8, the oxide semiconductor electrode 4 is immersed in the dye solution. By once evacuating the container 7 in which the oxide semiconductor electrode 4 is placed before immersion in the dye solution, gas such as air remaining in the pores of the oxide semiconductor electrode 4 can be efficiently removed. . By immersing the dye solution in the dye solution after evacuation, the dye solution can easily enter the part where the gas has been removed, so that the dye can be adsorbed on the pores of the oxide semiconductor electrode 4. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5008034-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013118803-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5490229-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103650233-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011145229-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004023594-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013110066-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013012404-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013001699-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005104760-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4672973-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109415229-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020104084-A |
| priorityDate |
2001-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |