| abstract |
(57) [Problem] To provide a lithographic photoresist composition usable as a chemically amplified photoresist. In a preferred embodiment, the composition comprises deep ultraviolet radiation, ie, radiation having a wavelength of less than 250 nm, For example, it is substantially transparent to 157 nm, 193 nm and 248 nm radiation and has high sensitivity and resolution. The composition comprises a fluorinated vinyl polymer, in particular fluorinated methacrylate, fluorinated methacrylonitrile or fluorinated methacrylic acid and a photoacid generator. The polymer can be a homopolymer or a copolymer. A method for forming a resist image on a substrate using the composition, that is, a method for manufacturing an integrated circuit or the like is also provided. |