| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0395 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L101-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate |
2001-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_616aa5b9010e798a9978f9d86e183b53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6172f38279d3afcf8206a52f0d933f70 |
| publicationDate |
2002-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002244296-A |
| titleOfInvention |
Method of forming hole pattern |
| abstract |
PROBLEM TO BE SOLVED: To form a fine and high aspect ratio hole pattern by irradiating a photosensitive material film made of a chemically amplified resist material with an ArF excimer laser to form a film to be etched. The planar shape of the hole is circular, and the diameter of the hole is not so much larger than a predetermined value. SOLUTION: On a film to be etched 11 deposited on a semiconductor substrate 10, a base polymer in which an adamantyl group is bonded as a protective group to a copolymer of a norbornene derivative and maleic anhydride and which is hardly soluble in alkali. When, A photosensitive material having an acid generator containing an onium salt compound is applied to form a photosensitive material film 12. The photosensitive material film 12 is irradiated with an ArF excimer laser through a photomask to form a hole 12a. Film 11 to be etched Is etched by using plasma having a plasma density of 1 × 10 10 / cm 3 or more by using the photosensitive material film 12 having the hole pattern as an etching mask, thereby forming the hole 1 in the film 11 to be etched. 1a is formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101285717-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009063639-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009119694-A |
| priorityDate |
2001-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |