http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002240449-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d0f52bb4069f8a19d70dcfb697c67a |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41N1-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C28-00 |
filingDate | 2001-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1441097aa78bb21cd96e8d6110c2f13f |
publicationDate | 2002-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2002240449-A |
titleOfInvention | Lithographic printing plate support and lithographic printing plate precursor using the same |
abstract | (57) Abstract: A photothermal conversion recording lithographic plate having high sensitivity, high resolution, and sufficient printability by efficiently using laser light used for writing as heat energy required for image formation. A lithographic printing plate support capable of forming a printing plate precursor and a lithographic printing plate precursor using the same are provided. SOLUTION: On a substrate, an infrared reflection type heat insulating layer using a material whose infrared reflectance at a wavelength of 800 nm to 1100 nm is 70% or more and whose material has a heat insulating property equal to or higher than that of ceramic alumina. Is provided. The infrared reflection type heat insulating layer is a multilayer in which two or more thin films made of materials different from each other are alternately laminated a plurality of times on a resin layer or a ceramic layer, made of a material selected from a fluoride, a semiconductor, and an oxide. Comprising a membrane or fluoride, It is preferable that the multilayer film made of a material selected from a semiconductor and an oxide is formed so as to have an average thickness of 1 μm to 12 μm. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009238581-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011050953-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4600502-B2 |
priorityDate | 2001-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 117.