http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002237523-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b1c5f332dddaff914ed798fc54999535 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 2001-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79ed06ff04c515d3bfbdb1dd2f71e0de http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d1aee05fd0286d05c6b632cb64f9ad2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_244007c7104ba837030bd7c84f70567b |
| publicationDate | 2002-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002237523-A |
| titleOfInvention | Methods of manufacturing metal-oxide-metal capacitors and related devices |
| abstract | (57) [Abstract] (Modified) [Problem] Using a metal other than aluminum such as copper, To provide a cost-effective manufacturing method which prevents leakage when forming an electrode or the like such as an MIM capacitor, is relatively easy, can flexibly reduce the size of a structure, and is cost-effective. A concave portion is formed on a surface of a dielectric layer provided on a microelectronic substrate, and a first barrier layer is placed on the dielectric layer along the concave portion. Further, it is made of a metal (preferably made of copper) other than A1. A first conductive element 140 is placed on the first barrier layer to fill the recess. Next, the second So that the barrier layer 150 of the above encapsulates the first conductive layer, Placed on the first conductive layer. Subsequently, the capacitor dielectric layer 170 and further the second conductive element 180 are placed on the capacitor dielectric layer. Thus, the first conductive element made of a metal has a structure enclosed by the first and second barrier layers. |
| priorityDate | 2000-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.