http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002231936-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f063b8222ec3c8e746a415e7f364473 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2001-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_872483ef8c3e562574a75a5c65f8c517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f416861ffdf0db4a6630c990d9eaf6f |
| publicationDate | 2002-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002231936-A |
| titleOfInvention | Method for preventing bump formation on side wall of metal silicide layer of gate electrode and method for manufacturing gate electrode |
| abstract | (57) Abstract: Provided are a method for preventing a bump from being formed on a side wall of a metal silicide layer of a gate electrode, and a method for manufacturing a gate electrode. The method comprises: (a) providing a gate electrode structure formed on a semiconductor substrate; and (b) using a mixed gas containing nitrogen gas and hydrogen gas for the gate electrode structure. Applying annealing (RTA); (C) subjecting the gate electrode structure to thermal oxidation for a short time. The present invention also provides (a) providing a chamber and a gate electrode structure formed on a semiconductor substrate; and (b) placing the gate electrode structure in the chamber and clearing oxygen gas in the chamber. To do, (C) Short-time annealing (RTA) for the gate electrode structure And (d) subjecting the gate electrode structure to thermal oxidation for a short time. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007173762-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006005323-A |
| priorityDate | 2001-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.