http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002231655-A

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filingDate 2001-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c8ce908bf1107274c74feaf97bab6e2
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publicationDate 2002-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002231655-A
titleOfInvention Laser annealing equipment
abstract (57) [Problem] To provide a laser annealing apparatus capable of producing a semiconductor film having good characteristics. A laser optical system having a laser oscillator that outputs a laser beam instead of a conventional laser annealing apparatus that can activate or crystallize a semiconductor film of the substrate by irradiating the laser beam, and supports the substrate. A substrate supporting structure is provided so that the intersection angle between the optical axis of the laser beam on the irradiation surface of the substrate and the axis orthogonal to the irradiation surface of the substrate has a predetermined value δ.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003133254-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014120672-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007103961-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7863541-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003224070-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-6977191-B1
priorityDate 2001-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 26.