http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002222901-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10158
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-1134
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-11
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-12
filingDate 2001-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8b7ab94d6c8953a66a9133f203ebac0
publicationDate 2002-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002222901-A
titleOfInvention Semiconductor device mounting method and mounting structure, semiconductor device manufacturing method, and semiconductor device
abstract [PROBLEMS] To provide a semiconductor device mounting method, a mounting structure thereof, a semiconductor device manufacturing method, and a semiconductor device capable of obtaining good electrical characteristics of a connection portion. SOLUTION: A semiconductor chip 21 provided with a first protruding electrode 8 by thinning the back surface is connected to a first external terminal 25 of an intermediate substrate 22 and flip-chip mounted. Further, terminals are provided on both surfaces of the intermediate substrate. A second projecting electrode 24 is formed on one surface of the formed second external connection terminal 26, and the second projecting electrode 2 After the etching process 4 is performed using plasma, a plurality of intermediate substrates 22 are stacked and mounted via the second protruding electrodes 24. As a result, the surface of the second protruding electrode 24 is cleaned, the surface of the intermediate substrate 22 made of polyimide resin is chemically activated, and good electrical characteristics of the interlayer connection portion can be obtained. In this case, the adhesion between the sealing material and the intermediate substrate is improved.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008166327-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4591715-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8093699-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4561969-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006179652-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012204631-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100394566-C
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007180593-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7662671-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005340451-A
priorityDate 2001-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10223683-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11154659-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2000022318-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H11163036-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H10224029-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID2244
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556224

Total number of triples: 40.