http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002218594-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_482700716d8dd893e9376b49d7a9f931 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_27de6beeb7cacfb436951cb05d450eb7 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04R31-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G7-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04R19-01 |
| filingDate | 2001-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a43138ebd2f47828b8c29f7c7806dff4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13383692e9c962ab8e8018b3b3dea55d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2016ba198e8e8f4d5cbe7095838582b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f56a73b174e49ddc9a5602d203d4b110 |
| publicationDate | 2002-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002218594-A |
| titleOfInvention | Manufacturing method of silicon oxide film electret, silicon oxide film electret obtained by the manufacturing method, and electret condenser microphone provided with the silicon oxide film electret |
| abstract | PROBLEM TO BE SOLVED: To provide a method for producing a silicon oxide film electret which has a small amount of contaminants such as moisture and hydrogen and can obtain a sufficiently high film forming rate, a silicon oxide film electret obtained by the production method, and And an ECM provided with the silicon oxide film electret. SOLUTION: A step of introducing oxygen into a vacuum processing chamber 2 in which a substrate 100 is placed, a step of ionizing the introduced oxygen by plasma processing, a simple silicon or a solid state containing silicon and oxygen as main components. B) generating gaseous silicon by colliding electrons with the silicon compound of the present invention, ionizing gaseous silicon by plasma treatment, and forming a silicon oxide film on the substrate 100 based on the reaction between ionized oxygen and silicon. Process, A method for manufacturing a silicon oxide film electret including a step of polarizing a silicon oxide film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8073166-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1781067-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009118264-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006013717-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1781067-A4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006050314-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009111622-A |
| priorityDate | 2001-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.