| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3203 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B7-125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| filingDate |
2001-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1f6b6e6e4264e165cfb86bee589dc9d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87215d8ad0e6ac8b1c7efe43adfeb0a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9f156130d57de966108c76aa5eb6c86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5bd1d442816c36fd07aba68944036a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aaa6ab6e83c64e31153f5ddf79a91ae7 |
| publicationDate |
2002-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002217498-A |
| titleOfInvention |
Nitride semiconductor laser device and optical device including the same |
| abstract |
(57) [Problem] To improve the light emission lifetime of a nitride semiconductor light emitting device. SOLUTION: A nitride semiconductor light emitting device has a processed substrate 101 including a groove and a hill formed on one main surface of a nitride semiconductor substrate. And the nitride semiconductor underlayer 1 covering the grooves and hills of the processed substrate 02, and n-type layers 103 to 1 on the nitride semiconductor underlayer. Light-emitting layer 1 including a quantum well layer or a quantum well layer and a barrier layer in contact with the quantum well layer between layer 05 and p-type layers 107 to 110 06, and a current confinement portion of the multilayer light emitting structure is formed above a region at least 1 μm from the center in the width direction of the groove and at least 1 μm from the center in the width direction of the hill. It is characterized by. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008087930-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8368183-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005353690-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006080497-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7501667-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009302250-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010137511-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006066583-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009123718-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7852891-B2 |
| priorityDate |
2001-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |