http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002217122-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-365 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-327 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
filingDate | 2001-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e379d8ca5d92d119ba1882873be0a07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4ee8d65dad4906330d7145f1ad00e42 |
publicationDate | 2002-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2002217122-A |
titleOfInvention | Method for growing compound semiconductor containing nitrogen and method for growing nitride III-V compound semiconductor |
abstract | PROBLEM TO BE SOLVED: To easily grow a nitrogen-containing compound semiconductor or a nitride group III-V compound semiconductor having good crystallinity. SOLUTION: When a compound semiconductor containing nitrogen or a nitride III-V compound semiconductor is grown by a vapor phase growth method such as a metal organic chemical vapor deposition method, at least one nitrogen atom is contained as a nitrogen source. An organic compound in which at least two groups having a molecular weight greater than at least 36 are bonded to the nitrogen atom, for example, diisopropylamine is used. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009088553-A |
priorityDate | 2001-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 67.