http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002212502-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D171-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04 |
| filingDate | 2001-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3f7b12d6486335e786045da041448a4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_597b4f551125092134ad384f1d099624 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4856861c3aa0e9c958f966e2283bfc54 |
| publicationDate | 2002-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002212502-A |
| titleOfInvention | Composition for forming film, method for forming porous film, and porous film |
| abstract | (A) A (A) containing 30 to 100 mol% of a structural unit (T unit) represented by the following general formula (1): R 1 —SiZ 3 (1), and the T unit Among them, a structural unit containing one silanol group represented by the following general formula (2) R 1 —Si (OH) Z ′ 2 (2) (T- 2 units) in an amount of 30 to 80 mol% (provided that R 1 represents a substituted or unsubstituted monovalent hydrocarbon group, and Z is OH Groups, hydrolyzable groups and siloxane residues, at least one of which represents a siloxane residue and Z 'represents a siloxane residue. ), A film-forming composition comprising: a silanol group-containing silicone resin having a number average molecular weight of 100 or more; and (B) a compound having a polyalkylene oxide structure. EFFECTS By using the composition of the present invention, the composition is flat and uniform while being porous and having a low dielectric constant. It is possible to form an optimum film as an interlayer insulating film when used for manufacturing a semiconductor device having a small dielectric constant and a large mechanical strength. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019023269-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7479509-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8906993-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2012141208-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-6365751-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012219219-A |
| priorityDate | 2001-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 163.