http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002208701-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 |
| filingDate | 2001-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee786dd093a96eff4eb6db98eb424e57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab9eb2b8a1809c8b131677a9b2b27450 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4ac48e6cabf42929706d798d3426059 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af76caa9ad9736d47fd6382d758976bc |
| publicationDate | 2002-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002208701-A |
| titleOfInvention | MIS semiconductor device |
| abstract | (57) [Summary] (with correction) [PROBLEMS] To improve a trade-off relationship between on-voltage and turn-off loss of a MIS semiconductor device such as an IGBT. An n + contact region and ap + contact region are formed in a first epitaxial layer deposited on a low resistance n + semiconductor substrate. N for the second epitaxial layer A + emitter region 14, a p base region 16, and an n − channel region 15 are formed. Emitter region 14, base region 1 A polysilicon gate electrode 18 is formed on the gate electrode 6 via a gate insulating film, and is covered with insulating films 19 and 20. Lateral direction (EL O) An n − drift layer 21 is formed from the surface of the channel region 15 by epitaxial growth. n - drift layer 2 An n + buffer layer 22 and ap + collector layer 23 are formed on the surface of the substrate 1. Thereby, the strength of the thin-film collector IGBT is increased and the processing is facilitated. Further, the step of bonding the bidirectional IGBT is avoided, and the processing is facilitated while maintaining the mechanical strength. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7790519-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7569431-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7262100-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7262478-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7355263-B2 |
| priorityDate | 2001-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.