Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_db496c7f79f0dfbca146c6a7100e0992 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01029 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-05042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05559 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19043 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05624 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01015 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate |
2000-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0271230fe1c829865e8e62207bcc6c98 |
publicationDate |
2002-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2002198534-A |
titleOfInvention |
Semiconductor device and method of manufacturing the same |
abstract |
PROBLEM TO BE SOLVED: To protect a source electrode from being corroded by a corrosive substance from an opening of a cover insulating film for forming a bonding pad, via an opening of the cover insulating film on the source electrode. When the TiNiAg film is covered by the lift-off method, there is a problem that the source electrode is exposed from between the cover insulating film and the TiNiAg film. SOLUTION: As a cover insulating film 22, a silicon nitride film 22a and a PSG film 22b are sequentially laminated, and a TiNiAg film 23 is formed on a source electrode 20 through openings of the silicon nitride film 22a and the PSG film 22b. P The opening of the SG film 22b is formed wider than the opening of the silicon nitride film 22a so that a step occurs at the opening end as the cover insulating film 22, and the step surface 22c is formed by the surface of the silicon nitride film 22a exposed from the PSG film 22b. The TiNiAg film 23 is formed on this step surface 2 by a lift-off method. 2c is overlapped and covered. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7547976-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8089165-B2 |
priorityDate |
2000-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |