http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002194024-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fc6220b93fae4be14ada49e4ecc1860b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F212-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
| filingDate | 2001-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6744a67635ff95df5490276fc5a01d61 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1f25dc96bed9188557c11a6bcc005f0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c1406fa117a8ba162b5c26fd357b725 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_638de2a9f78d01322c79d6582fbb0094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f26eb42f681042be2c10ccfed20dd22b |
| publicationDate | 2002-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002194024-A |
| titleOfInvention | Fine pattern forming material and pattern forming method |
| abstract | (57) [Summary] [Constitution] General formula [I] A resist material comprising a polymer represented by the formula, an acid generator capable of generating an acid upon irradiation with an electron beam, and a solvent capable of dissolving the acid, and forming a fine pattern using the resist material Method. By using the resist material of the present invention as an electron beam resist, it is possible to form a positive resist pattern with high sensitivity, high resolution and stable pattern dimensions. Particularly, the polymer according to the present invention is characterized in that it has a protecting group that can be easily removed in the presence of an acid, and extremely high sensitivity can be achieved by combining this with an appropriate acid generator. And the throughput is improved. or, Since an alkaline aqueous solution can be used as a developer, There is no swelling during development, no problem on the environment and human body, A fine pattern can be easily formed and has great value in the manufacture of an ultra-high-density integrated circuit. |
| priorityDate | 1992-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 308.