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filingDate 2000-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2002-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002184830-A
titleOfInvention Method and apparatus for detecting defects in insulating film
abstract [PROBLEMS] To provide a technique for specifying a position of a minute defect in an insulating film with high accuracy. An insulating film and a Pt electrode electrically connected to a silicon substrate are immersed in an Na2Au (SO3) 2 electrolyte, a pulse voltage is applied between the silicon substrate and the Pt electrode, and a 10 nm or less diameter is formed on the insulating film defect. Au particles are precipitated.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111074352-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006098362-A
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Total number of triples: 23.