http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002184829-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-1272 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
filingDate | 2000-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de0e86ad29f185e6a47bf0867baab757 |
publicationDate | 2002-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-2002184829-A |
titleOfInvention | Insulation film capacity evaluation device |
abstract | PROBLEM TO BE SOLVED: To accurately measure CV characteristics of an ultrathin insulating film without being directly affected by a tunnel leakage current, and to prevent boron penetration of a P + gate electrode in a MIS structure of an ultrathin insulating film. The present invention also provides an insulating film capacity evaluation device and an insulating film capacity evaluation method that can also be evaluated. SOLUTION: M of a capacity unknown (C2) to be measured is With respect to the IS structure, at least one of a MIS structure having a known capacity (C1), at least one of a dielectric and a capacitor is connected in series, and CV characteristics are measured, and an unknown capacity is calculated from the measured combined capacity. I do. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100633995-B1 |
priorityDate | 2000-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.