abstract |
[PROBLEMS] To provide a metal wiring of a semiconductor element and a method of manufacturing the same, which can suppress a phenomenon in which the metal wiring is lifted by a stress with an interlayer insulating film during a subsequent heat treatment. An interlayer insulating film on a semiconductor substrate is provided. Inside, the width of the lower part is made wider than that of the upper part, and the metal wiring 108 is formed. a, 110a are formed. |