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filingDate 2001-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_625feadf237c2fca0ce14d39d2144f1c
publicationDate 2002-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002184778-A
titleOfInvention Metal wiring for semiconductor device and method of manufacturing the same
abstract [PROBLEMS] To provide a metal wiring of a semiconductor element and a method of manufacturing the same, which can suppress a phenomenon in which the metal wiring is lifted by a stress with an interlayer insulating film during a subsequent heat treatment. An interlayer insulating film on a semiconductor substrate is provided. Inside, the width of the lower part is made wider than that of the upper part, and the metal wiring 108 is formed. a, 110a are formed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012175109-A
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