http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002173669-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dbdfa36b677f4ef61245ca725011e221
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14
filingDate 2000-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_924941af4e01e7b113913df5d02f9b05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_219c91705611912c7500a396b3144a81
publicationDate 2002-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002173669-A
titleOfInvention Slurry for polishing metal film on semiconductor substrate
abstract (57) Abstract: In a process of flattening a metal film on a semiconductor substrate, the metal film is polished at high speed even under a low load condition, and defects such as scratch, dishing, and erosion are generated on a surface to be polished. Provided is a metal film polishing slurry that can be suppressed. SOLUTION: Colloidal titanium oxide and iron (I) II) A slurry for polishing a metal film, comprising a compound as an essential component. The interaction between the colloidal titanium oxide and the iron (III) ion generated from the iron (III) compound lowers the etchability of the slurry itself and suppresses the occurrence of defects such as dishing and erosion. Further, since it has excellent polishing performance such as high-speed polishing and low scratching even under low load conditions, application to a mass production process or a process using a porous low dielectric constant insulating film can be expected.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015502417-A
priorityDate 2000-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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